Purity and minority carrier lifetime in silicon produced by direct electrolytic reduction of SiO2 in molten CaCl2

Ming Zhong, Kouji Yasuda, Takayuki Homma, Toshiyuki Nohira

    研究成果: Article

    抄録

    Si powder was produced by direct electrolytic reduction of SiO2 in molten CaCl2 at 1123 K. From the Si powder, Si ingots were obtained by a floating zone method. The concentrations of most metallic elements and of P in the Si ingots were lower than the acceptable levels for solar grade Si. The minority carrier lifetimes in the Si ingots were measured using a microwave photo conductivity decay method. The obtained values of ca. 1.0 μs were two orders of magnitude shorter than those observed in an Si ingot prepared from 10N purity Si.

    元の言語English
    ページ(範囲)77-81
    ページ数5
    ジャーナルElectrochemistry
    86
    発行部数2
    DOI
    出版物ステータスPublished - 2018 1 1

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    Electrolytic reduction
    Carrier lifetime
    Silicon
    Ingots
    Molten materials
    Powders
    Microwaves

    ASJC Scopus subject areas

    • Electrochemistry

    これを引用

    Purity and minority carrier lifetime in silicon produced by direct electrolytic reduction of SiO2 in molten CaCl2 . / Zhong, Ming; Yasuda, Kouji; Homma, Takayuki; Nohira, Toshiyuki.

    :: Electrochemistry, 巻 86, 番号 2, 01.01.2018, p. 77-81.

    研究成果: Article

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    AU - Zhong, Ming

    AU - Yasuda, Kouji

    AU - Homma, Takayuki

    AU - Nohira, Toshiyuki

    PY - 2018/1/1

    Y1 - 2018/1/1

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    KW - Electrolysis

    KW - Molten Salt

    KW - Purity

    KW - Silicon

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