PZT-based high coupling with low permittivity thin films

Kiyotaka Wasa; Tomoaki Matsushima; Hideaki Adachi; Toshifumi Matsunaga; Masashi Suzuki; Takahiko Yanagitani; Takashi Yamamoto; Shinya Yoshida; Shuji Tanaka; S. Trolier-Mckinstry

doi:10.1109/ISAF.2013.6748700

PZT-based high coupling with low permittivity thin films

Kiyotaka Wasa, Tomoaki Matsushima, Hideaki Adachi, Toshifumi Matsunaga, Masashi Suzuki, Takahiko Yanagitani, Takashi Yamamoto, Shinya Yoshida, Shuji Tanaka, S. Trolier-Mckinstry

研究成果: Paper › 査読

抄録

PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and e_31,f = -8 ∼ - 12C/m². Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with e_31,f = -12 C/m ². The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics.

本文言語	English
ページ	69-72
ページ数	4
DOI	https://doi.org/10.1109/ISAF.2013.6748700
出版ステータス	Published - 2013
外部発表	はい
イベント	2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 - Prague 4, Czech Republic 継続期間: 2013 7月 21 → 2013 7月 25

Other

Other	2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013
国/地域	Czech Republic
City	Prague 4
Period	13/7/21 → 13/7/25

ASJC Scopus subject areas

電子工学および電気工学

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10.1109/ISAF.2013.6748700

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引用スタイル

Wasa, K., Matsushima, T., Adachi, H., Matsunaga, T., Suzuki, M., Yanagitani, T., Yamamoto, T., Yoshida, S., Tanaka, S., & Trolier-Mckinstry, S. (2013). PZT-based high coupling with low permittivity thin films. 69-72. Paper presented at 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013, Prague 4, Czech Republic. https://doi.org/10.1109/ISAF.2013.6748700

Wasa, K, Matsushima, T, Adachi, H, Matsunaga, T, Suzuki, M, Yanagitani, T, Yamamoto, T, Yoshida, S, Tanaka, S & Trolier-Mckinstry, S 2013, 'PZT-based high coupling with low permittivity thin films', Paper presented at 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013, Prague 4, Czech Republic, 13/7/21 - 13/7/25 pp. 69-72. https://doi.org/10.1109/ISAF.2013.6748700

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AB - PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and e31,f = -8 ∼ - 12C/m2. Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with e31,f = -12 C/m 2. The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics.

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PZT-based high coupling with low permittivity thin films

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