Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition

T. Ohnishi*, B. T. Hang, X. Xu, M. Osada, K. Takada

*この研究の対応する著者

研究成果: Article査読

34 被引用数 (Scopus)

抄録

Thin films of c-axis-oriented LiCoO2were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatlyaffect the crystal quality of the epitaxial LiCoO2thin films. In addition, high-quality LiCoO2thin films were found to grow without any impurity phases under relatively low oxygen partial pressure,although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity.This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensable to grow high-quality complex compound thin films by PLD.

本文言語English
ページ(範囲)1886-1889
ページ数4
ジャーナルJournal of Materials Research
25
10
DOI
出版ステータスPublished - 2010 10
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 機械工学
  • 材料力学
  • 凝縮系物理学

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