Quantitative analysis of electronic transport through weakly coupled metal/organic interfaces

A. S. Molinari, I. Gutírrez Lezama, P. Parisse, T. Takenobu, Y. Iwasa, A. F. Morpurgo

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be quantitatively reproduced in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes.

本文言語English
論文番号133303
ジャーナルApplied Physics Letters
92
13
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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