Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

Meishoku Koh*, Katsuyuki Horita, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage Vg-drain current Id characteristics (Vg< threshold voltage Vth) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on Vg-Id characteristics (Vg≳Vth) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed.

本文言語English
ページ(範囲)3467-3469
ページ数3
ジャーナルApplied Physics Letters
68
24
DOI
出版ステータスPublished - 1996

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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