Quantized conductance and neuromorphic behavior of a gapless-type Ag-Ta2O5 atomic switch

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

We investigated quantization behavior in conductance of an Ag/Ta2O5/Pt gapless-type atomic switch. Stepwise increases and decreases in the conductance were observed when small positive and negative bias voltages were applied to the Ag electrode, respectively, where each step corresponds to the conductance of a single atomic point contact. The conductance level could also be controlled by applying voltage pulses with varied amplitudes. Furthermore, when the interval time of consecutive input pulses was turned, we also observed long-term potentiation behavior similar to that of biological synapses. These results indicate that the oxide-based, gapless-type atomic switch has potential for use as a building block of neural computing systems.

本文言語English
ジャーナルMaterials Research Society Symposium Proceedings
1562
DOI
出版ステータスPublished - 2013
外部発表はい
イベント2013 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2013 4月 12013 4月 5

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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