抄録
The polarization dependence of quantum beats from homogeneously broadened excitons in a high quality GaN epitaxial layer is studied. The wurtzite GaN epitaxial layers are grown to a thickness of 100 μm by vapor phase epitaxy into a sapphire substrate. The second harmonic of a Kerr lens mode-locked Ti-sapphire laser is used. In the collinear polarization configuration, the beats start with a maximum at τ = 0. In the crossed linear polarization, the beats start with a minimum and exhibit a π-phase shift compared to the collinear case. The decay time is 0.67 ps in the collinear polarization configuration and 0.60 ps in the crossed linear polarization configuration.
本文言語 | English |
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ページ | 60-61 |
ページ数 | 2 |
出版ステータス | Published - 1998 |
外部発表 | はい |
イベント | Proceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA 継続期間: 1998 5月 3 → 1998 5月 8 |
Other
Other | Proceedings of the 1998 International Quantum Electronics Conference |
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City | San Francisco, CA, USA |
Period | 98/5/3 → 98/5/8 |
ASJC Scopus subject areas
- 物理学および天文学(全般)