Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure

Takahiro Deguchi*, Kaoru Sekiguchi, Atsushi Nakamura, Takayuki Sota, Ryuji Matsuo, Shigefusa Chichibu, Shuji Nakamura

*この研究の対応する著者

研究成果: Article査読

159 被引用数 (Scopus)

抄録

Excitonic absorption was observed in a transmittance spectrum of AlGaN/GaN/AlGaN single quantum well structure with a well width of 5 nm at room temperature. The total internal electric field strength in the well was about 0.73 MV/cm, which was estimated from the absorption peak position based on a simple calculation, neglecting excitons. The observation is clearly due to the quantum-confined Stark effect. While excitonic absorption was clearly observed even in such a high internal field, no light emission was detected under a He-Cd laser excitation at temperatures ranging from room temperature to T = 10 K. Light emission accompanied by a blue shift of the emission peak and an increase of emission intensity was observed under higher excitation power density. The obvious conclusion in the present case is that the presence of a high internal electric field in the well is a disadvantage for light emission.

本文言語English
ページ(範囲)L914-L916
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
8 B
DOI
出版ステータスPublished - 1999 8

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

フィンガープリント

「Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル