Quantum transport in deterministically implanted single-donors in Si FETs

T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, Takashi Tanii, T. Endo, Y. Ono, E. Prati

    研究成果: Conference contribution

    9 引用 (Scopus)

    抜粋

    Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.

    元の言語English
    ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting, IEDM
    DOI
    出版物ステータスPublished - 2011
    イベント2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
    継続期間: 2011 12 52011 12 7

    Other

    Other2011 IEEE International Electron Devices Meeting, IEDM 2011
    United States
    Washington, DC
    期間11/12/511/12/7

      フィンガープリント

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    これを引用

    Shinada, T., Hori, M., Guagliardo, F., Ferrari, G., Komatubara, A., Kumagai, K., Tanii, T., Endo, T., Ono, Y., & Prati, E. (2011). Quantum transport in deterministically implanted single-donors in Si FETs. : Technical Digest - International Electron Devices Meeting, IEDM [6131644] https://doi.org/10.1109/IEDM.2011.6131644