Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe

M. Koh, K. Horita, B. Shigeta, T. Matsukawa, A. Kishida, T. Tanii, S. Mori, I. Ohdomari

研究成果: Article

2 被引用数 (Scopus)

抄録

Radiation effects induced by MeV He single ions in pMOSFETs and nMOSFETs in commercially available CMOS4007 have been studied extensively. The key results from this study are: (1) pMOSFETs are more fragile than nMOSFETs in terms of threshold voltage shift, (2) nMOSFETs are more susceptible than pMOSFETs to the degradation of subthreshold swing. The different features in the radiation effects have been discussed comprehensively.

本文言語English
ページ(範囲)364-368
ページ数5
ジャーナルApplied Surface Science
104-105
DOI
出版ステータスPublished - 1996 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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