Radiative and nonradiative lifetimes in nonpolar m -plane Inx Ga1-x NGaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

T. Onuma*, T. Koyama, A. Chakraborty, M. McLaurin, B. A. Haskell, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, S. F. Chichibu

*この研究の対応する著者

研究成果: Article査読

21 被引用数 (Scopus)

抄録

Different from the case for polar (0001) Inx Ga1-x N multiple quantum wells (MQWs), the effective radiative lifetimes (τR,eff) at 8 K of violet (V: 3.15 eV), purple (P: 3.00 eV), and blue (B: 2.83 eV) emission peaks in nonpolar (1 1- 00) Inx Ga1-x NGaN MQWs fabricated on various GaN templates were found to be nearly independent of InN molar fraction x being approximately 1 ns. The result indicates the absence of polarization fields parallel to the MQW normal. For each luminescence peak, the effective nonradiative lifetime (τNR,eff) at room temperature of the MQWs grown on "Ga-polar" wings of the GaN template prepared by lateral epitaxial overgrowth (LEO) was longer than that for the MQWs grown on "N-polar" wings, windows, or on conventional GaN templates, which had high density basal plane stacking faults and threading dislocations. Since τR,eff was little affected by the presence of defects, the increase in τNR,eff brought fivefold improvement in the equivalent internal quantum efficiency ( int eq) of V peak. Because B peak was mostly generated from defective areas, the increase in int eq was not so remarkable (29%-36%). However, these values are approximately twice that reported for (11 2- 0) InGaNGaN MQWs grown on LEO GaN templates [Onuma, Appl. Phys. Lett. 86, 151918 (2005)].

本文言語English
ページ(範囲)1524-1528
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
25
4
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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