Raman spectra of carriers in ionic-liquid-gated transistors fabricated with poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene)

Yukio Furukawa, Kotaro Akiyama, Ippei Enokida, Jun Yamamoto

    研究成果: Article

    4 引用 (Scopus)

    抄録

    We observed the Raman spectra of carriers, positive polarons and bipolarons, generated in a poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) film by FeCl3 vapor doping. Electrical conductivity and Raman measurements indicate that the dominant carriers in the conducting state were bipolarons. We identified positive polarons and bipolarons generated in an ionic-liquid-gated transistor (ILGT) fabricated with PBTTT-C14 as an active semiconductor and an ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide [BMIM][TFSI] as a gate dielectric using Raman spectroscopy. The relationship between the source-drain current (ID) at a constant source-drain voltage (VD) and the gate voltage (VG) was measured. ID increased above -VG = 1.1 V and showed a maximum at -VG = 2.0 V. Positive polarons were formed at the initial stage of electrochemical doping (-VG = 0.8 V). As ID increased, positive bipolarons were formed. Above VG = -2.0 V, bipolarons were dominant. The charge density (n), the doping level (x), and the mobility of the bipolarons were calculated from the electrochemical measurements. The highest mobility (μ) of bipolarons was 0.72 cm2 V-1 s-1 at x = 110 mol%/repeating unit (-VG = 2.0 V), whereas the highest μ of polarons was 4.6 × 10-4 cm2 V-1 s-1 at x = 10 mol%.

    元の言語English
    ページ(範囲)29-34
    ページ数6
    ジャーナルVibrational Spectroscopy
    85
    DOI
    出版物ステータスPublished - 2016 7 1

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    Ionic Liquids
    Thiophenes
    Raman scattering
    Transistors
    Polarons
    Electric potential
    Doping (additives)
    Dielectric spectroscopy
    Gate dielectrics
    Drain current
    Charge density
    Raman spectroscopy
    Vapors
    Semiconductor materials

    ASJC Scopus subject areas

    • Spectroscopy

    これを引用

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    title = "Raman spectra of carriers in ionic-liquid-gated transistors fabricated with poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene)",
    abstract = "We observed the Raman spectra of carriers, positive polarons and bipolarons, generated in a poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) film by FeCl3 vapor doping. Electrical conductivity and Raman measurements indicate that the dominant carriers in the conducting state were bipolarons. We identified positive polarons and bipolarons generated in an ionic-liquid-gated transistor (ILGT) fabricated with PBTTT-C14 as an active semiconductor and an ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide [BMIM][TFSI] as a gate dielectric using Raman spectroscopy. The relationship between the source-drain current (ID) at a constant source-drain voltage (VD) and the gate voltage (VG) was measured. ID increased above -VG = 1.1 V and showed a maximum at -VG = 2.0 V. Positive polarons were formed at the initial stage of electrochemical doping (-VG = 0.8 V). As ID increased, positive bipolarons were formed. Above VG = -2.0 V, bipolarons were dominant. The charge density (n), the doping level (x), and the mobility of the bipolarons were calculated from the electrochemical measurements. The highest mobility (μ) of bipolarons was 0.72 cm2 V-1 s-1 at x = 110 mol{\%}/repeating unit (-VG = 2.0 V), whereas the highest μ of polarons was 4.6 × 10-4 cm2 V-1 s-1 at x = 10 mol{\%}.",
    keywords = "Bipolaron, Ionic liquid, Organic transistor, PBTTT, Polaron, Raman",
    author = "Yukio Furukawa and Kotaro Akiyama and Ippei Enokida and Jun Yamamoto",
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    TY - JOUR

    T1 - Raman spectra of carriers in ionic-liquid-gated transistors fabricated with poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene)

    AU - Furukawa, Yukio

    AU - Akiyama, Kotaro

    AU - Enokida, Ippei

    AU - Yamamoto, Jun

    PY - 2016/7/1

    Y1 - 2016/7/1

    N2 - We observed the Raman spectra of carriers, positive polarons and bipolarons, generated in a poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) film by FeCl3 vapor doping. Electrical conductivity and Raman measurements indicate that the dominant carriers in the conducting state were bipolarons. We identified positive polarons and bipolarons generated in an ionic-liquid-gated transistor (ILGT) fabricated with PBTTT-C14 as an active semiconductor and an ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide [BMIM][TFSI] as a gate dielectric using Raman spectroscopy. The relationship between the source-drain current (ID) at a constant source-drain voltage (VD) and the gate voltage (VG) was measured. ID increased above -VG = 1.1 V and showed a maximum at -VG = 2.0 V. Positive polarons were formed at the initial stage of electrochemical doping (-VG = 0.8 V). As ID increased, positive bipolarons were formed. Above VG = -2.0 V, bipolarons were dominant. The charge density (n), the doping level (x), and the mobility of the bipolarons were calculated from the electrochemical measurements. The highest mobility (μ) of bipolarons was 0.72 cm2 V-1 s-1 at x = 110 mol%/repeating unit (-VG = 2.0 V), whereas the highest μ of polarons was 4.6 × 10-4 cm2 V-1 s-1 at x = 10 mol%.

    AB - We observed the Raman spectra of carriers, positive polarons and bipolarons, generated in a poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) film by FeCl3 vapor doping. Electrical conductivity and Raman measurements indicate that the dominant carriers in the conducting state were bipolarons. We identified positive polarons and bipolarons generated in an ionic-liquid-gated transistor (ILGT) fabricated with PBTTT-C14 as an active semiconductor and an ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide [BMIM][TFSI] as a gate dielectric using Raman spectroscopy. The relationship between the source-drain current (ID) at a constant source-drain voltage (VD) and the gate voltage (VG) was measured. ID increased above -VG = 1.1 V and showed a maximum at -VG = 2.0 V. Positive polarons were formed at the initial stage of electrochemical doping (-VG = 0.8 V). As ID increased, positive bipolarons were formed. Above VG = -2.0 V, bipolarons were dominant. The charge density (n), the doping level (x), and the mobility of the bipolarons were calculated from the electrochemical measurements. The highest mobility (μ) of bipolarons was 0.72 cm2 V-1 s-1 at x = 110 mol%/repeating unit (-VG = 2.0 V), whereas the highest μ of polarons was 4.6 × 10-4 cm2 V-1 s-1 at x = 10 mol%.

    KW - Bipolaron

    KW - Ionic liquid

    KW - Organic transistor

    KW - PBTTT

    KW - Polaron

    KW - Raman

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    U2 - 10.1016/j.vibspec.2016.03.024

    DO - 10.1016/j.vibspec.2016.03.024

    M3 - Article

    AN - SCOPUS:84962696956

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    SP - 29

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    JO - Vibrational Spectroscopy

    JF - Vibrational Spectroscopy

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