Raman spectra of polyacetylene doped with electron acceptor

Y. Uchida*, Y. Furukawa, M. Tasumi

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The Raman spectra of a polyacetylene film doped heavily with SO3 have been measured with excitation wavelengths between 488.0 and 1064 nm. Observed Raman bands are attributed to positively charged domains generated by SO3 doping. Doping-induced changes in the Raman spectra are summarized as follows. (1) The ν1 and ν3 bands observed in the region of 1575-1485 and 1147-1112 cm-1, respectively, upshift upon doping. (2) The ν1 and ν3 bands become broad upon doping. (3) Small but significant upshifts of the ν2 band in the region of 1301-1294 cm-1 are observed upon p-type doping in contrast to downshifts for n-type doping.

本文言語English
ページ(範囲)55-56
ページ数2
ジャーナルSynthetic Metals
69
1-3
DOI
出版ステータスPublished - 1995 3 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 材料力学
  • 機械工学
  • 金属および合金
  • 材料化学

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