Rapid growth of AlN films by particle-precipitation aided chemical vapor deposition

Hiroshi Komiyama, Toshio Ohsawa

研究成果: Article

35 引用 (Scopus)

抄録

A colorless and transparent AlN film 0.3 mm in thickness was grown on a quartz glass substrate by the reaction between AlCl3 and NH3 at 1073 K and atmospheric pressure. The growth rate of this film was as large as 80 nm/s. The formation of fine particles in the gas followed by their precipitation onto the substrate kept colder than the gas, due to thermophoretic and diffusional movements, was presumably responsible for this rapid growth.

元の言語English
ページ(範囲)L795-L797
ジャーナルJapanese Journal of Applied Physics
24
発行部数10
DOI
出版物ステータスPublished - 1985
外部発表Yes

Fingerprint

particle precipitation
Chemical vapor deposition
vapor deposition
Substrates
Gases
gases
Atmospheric pressure
Quartz
atmospheric pressure
quartz
Glass
glass

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

@article{48f60dc3250e49068d32be895d333e16,
title = "Rapid growth of AlN films by particle-precipitation aided chemical vapor deposition",
abstract = "A colorless and transparent AlN film 0.3 mm in thickness was grown on a quartz glass substrate by the reaction between AlCl3 and NH3 at 1073 K and atmospheric pressure. The growth rate of this film was as large as 80 nm/s. The formation of fine particles in the gas followed by their precipitation onto the substrate kept colder than the gas, due to thermophoretic and diffusional movements, was presumably responsible for this rapid growth.",
author = "Hiroshi Komiyama and Toshio Ohsawa",
year = "1985",
doi = "10.1143/JJAP.24.L795",
language = "English",
volume = "24",
pages = "L795--L797",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "10",

}

TY - JOUR

T1 - Rapid growth of AlN films by particle-precipitation aided chemical vapor deposition

AU - Komiyama, Hiroshi

AU - Ohsawa, Toshio

PY - 1985

Y1 - 1985

N2 - A colorless and transparent AlN film 0.3 mm in thickness was grown on a quartz glass substrate by the reaction between AlCl3 and NH3 at 1073 K and atmospheric pressure. The growth rate of this film was as large as 80 nm/s. The formation of fine particles in the gas followed by their precipitation onto the substrate kept colder than the gas, due to thermophoretic and diffusional movements, was presumably responsible for this rapid growth.

AB - A colorless and transparent AlN film 0.3 mm in thickness was grown on a quartz glass substrate by the reaction between AlCl3 and NH3 at 1073 K and atmospheric pressure. The growth rate of this film was as large as 80 nm/s. The formation of fine particles in the gas followed by their precipitation onto the substrate kept colder than the gas, due to thermophoretic and diffusional movements, was presumably responsible for this rapid growth.

UR - http://www.scopus.com/inward/record.url?scp=0022144690&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022144690&partnerID=8YFLogxK

U2 - 10.1143/JJAP.24.L795

DO - 10.1143/JJAP.24.L795

M3 - Article

AN - SCOPUS:0022144690

VL - 24

SP - L795-L797

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

ER -