Rare-earth-doped SiO2 films prepared by plasma-enhanced chemical vapour deposition

M. Yoshihara*, A. Sekiya, T. Morita, K. Ishii, S. Shimoto, S. Sakai, Y. Ohki

*この研究の対応する著者

研究成果: Article査読

21 被引用数 (Scopus)

抄録

Rare-earth-doped thin SiO2 films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of Tb3+-doped films, strong luminescence peaks from the 5D4 level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or 900°C, luminescence peaks from the 5D3 level appear. Under DC voltages, electroluminescence from the 5D4 level was also observed.

本文言語English
ページ(範囲)1908-1912
ページ数5
ジャーナルJournal of Physics D: Applied Physics
30
13
DOI
出版ステータスPublished - 1997 7月 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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