Rare-earth-doped SiO2 films prepared by plasma-enhanced chemical vapour deposition

M. Yoshihara, A. Sekiya, T. Morita, K. Ishii, S. Shimoto, S. Sakai, Y. Ohki

研究成果: Article

19 引用 (Scopus)

抜粋

Rare-earth-doped thin SiO2 films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of Tb3+-doped films, strong luminescence peaks from the 5D4 level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or 900°C, luminescence peaks from the 5D3 level appear. Under DC voltages, electroluminescence from the 5D4 level was also observed.

元の言語English
ページ(範囲)1908-1912
ページ数5
ジャーナルJournal of Physics D: Applied Physics
30
発行部数13
DOI
出版物ステータスPublished - 1997 7 7

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

これを引用