Reaction of Si with HCl to form chlorosilanes time dependent nature and reaction model

Suguru Noda*, Katsuaki Tanabe, Takashi Yahiro, Toshio Osawa, Hiroshi Komiyama

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

We propose a chemical vapor deposition (CVD) process with closed gas recycling for making low-cost, crystalline silicon thin films for solar cells, which connects chlorosilane synthesis from Si and HCl with Si thin-film growth by CVD from chlorosilanes. In this work we studied the formation of chlorosilanes by the reaction of Si with HCl at temperatures ranging from 623 to 723 K. The reaction rate is time dependent, and many pores are formed on the surface of particles after reaction. These pores are active sites for chemical reactions, and the reaction rates increase with increasing pore area. The rate can be correlated with the conversion ratio of Si, and the temporal evolution of the reaction rate can be explained by a reaction model called the shrinking-core model with growing pores. By using this model, we estimated the reaction rates per unit area of activated surfaces and converted them into a rate equation that can be used for the reactor design. The incubation time of the reaction can be shortened by pretreating the Si particles in a fluidized bed, which probably creates defects in the native oxide layers on the particles, which in turn become reactive sites.

本文言語English
ページ(範囲)C399-C404
ジャーナルJournal of the Electrochemical Society
151
6
DOI
出版ステータスPublished - 2004 6月 24
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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