Reactions and diffusion of atomic and molecular oxygen in the SiO2 network

K. Tatsumura*, T. Shimura, E. Mishima, K. Kawamura, D. Yamasaki, H. Yamamoto, T. Watanabe, M. Umeno, I. Ohdomari

*この研究の対応する著者

研究成果: Article査読

32 被引用数 (Scopus)

抄録

To address the reactions and diffusion of atomic and molecular oxygen in SiO2, the modification of the SiO2 network on exposure to an atomic or molecular oxygen atmosphere is investigated by measuring the x-ray-diffraction profile of the residual order peak emanating from the oxide. Analyses of the peak intensity and its fringe pattern provide experimental evidence for the recent theoretical predictions, indicating that atomic oxygen is incorporated into the SiO2 network near the surface and diffuses toward the interface along with modifying it even at a low temperature of 400°C, whereas molecular oxygen diffuses without reacting with the bulk SiO2 even at a temperature of 850°C that is sufficiently high for oxidation reaction at the interface.

本文言語English
論文番号045205
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
72
4
DOI
出版ステータスPublished - 2005 7 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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