Synchrotron Radiation (SR) is now attracting much attention as a promising source for X-ray lithography because of its high intensity and small divergence. In the usual way of fine pattern replication using SR, resist has been processed by wet chemical etching after exposure. Lithography by SR, however, generally requires vacuum conditions by the strong absorption of SR by air. Therefore, the resist process should be dry which in turn enables avoiding any pattern deterioration due to swelling during wet development. Recently, direct removal of resist materials by SR irradiation only has been observed. The objective of the present paper is to describe the design concept and the fundamental characteristics of a low energy reactive ion source, which has been designed for simultaneous use with SR to increase the direct engraving rate.
|出版ステータス||Published - 1986 12 1|
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