Readout ASIC with SOI technology for X-ray CCDs

Tetsuichi Kishishita*, Toshihiro Idehara, Hirokazu Ikeda, Hiroshi Tsunemi, Yasuo Arai, Goro Sato, Tadayuki Takahashi

*この研究の対応する著者

研究成果査読

2 被引用数 (Scopus)

抄録

We developed an analog front-end application specific integrated circuit (ASIC) with a fully depleted (FD) silicon-on-insulator (SOI) technology for readout of X-ray CCDs. The ASIC contains seven readout channels, each of which is equipped with the correlated double sampling circuit followed by an amplitude-to-pulse width conversion circuit. We combined the ASIC with an X-ray CCD for performance evaluation tests. We succeeded in processing analog signals from the CCD and confirmed an X-ray imaging and photon-counting capabilities by irradiating a radioisotope 55Fe. The energy resolution is 305 eV at 5.9 keV (full-width at half maximum) and the readout noise is 53.7 μV for power consumption of 33 mW per chip. The ASIC proves that the FD-SOI process can be a practically usable option for front-end applications.

本文言語English
論文番号5497180
ページ(範囲)2359-2364
ページ数6
ジャーナルIEEE Transactions on Nuclear Science
57
4 PART 2
DOI
出版ステータスPublished - 2010 8

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 原子力エネルギーおよび原子力工学
  • 核物理学および高エネルギー物理学

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