Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe

M. Miyachi, Y. Ohira, S. Komatsu, M. Kurihara, N. Shimoyama, M. Kobayashi, Y. Kato, A. Yoshikawa*

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.

本文言語English
ページ(範囲)261-265
ページ数5
ジャーナルJournal of Crystal Growth
159
1-4
DOI
出版ステータスPublished - 1996 2
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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