Real-time observation of the interface between SiC and a liquid alloy and its application to the dissolution behavior of SiC at 1573 K

Sakiko Kawanishi*, Takeshi Yoshikawa, Kazuki Morita, Kazuhiko Kusunoki, Kazuhito Kamei, Hiroshi Suzuki, Hidemitsu Sakamoto

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Real-time observation of the high temperature interface between silicon carbide (SiC) and liquid alloy is indispensable to optimize the conditions for producing high quality SiC crystals by the solution growth method. In this work, real-time observation of the interface was established by using the interference observation to measure the height profile of the interface. The temperature dependence of the refractive index of 4H-SiC was measured up to 1773 K. The height measurement was then carried out for the SiC/alloy interface at 1573 K. From interference observation, bunched step heights of less than 10 nm were measured. The developed technique was applied for the real-time observation of dissolution behavior of SiC into molten Fe-Si alloy at 1573 K. The dissolution kinetics was discussed in terms of carbon mass transfer in the solution and interfacial reaction.

本文言語English
論文番号214313
ジャーナルJournal of Applied Physics
114
21
DOI
出版ステータスPublished - 2013 12月 7
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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