Real-time observation of the high temperature interface between silicon carbide (SiC) and liquid alloy is indispensable to optimize the conditions for producing high quality SiC crystals by the solution growth method. In this work, real-time observation of the interface was established by using the interference observation to measure the height profile of the interface. The temperature dependence of the refractive index of 4H-SiC was measured up to 1773 K. The height measurement was then carried out for the SiC/alloy interface at 1573 K. From interference observation, bunched step heights of less than 10 nm were measured. The developed technique was applied for the real-time observation of dissolution behavior of SiC into molten Fe-Si alloy at 1573 K. The dissolution kinetics was discussed in terms of carbon mass transfer in the solution and interfacial reaction.
|ジャーナル||Journal of Applied Physics|
|出版ステータス||Published - 2013 12月 7|
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