Realization of graphene field-effect transistor with high-κ HCa 2Nb3O10 nanoflake as top-gate dielectric

Wenwu Li*, Song Lin Li, Katsuyoshi Komatsu, Alex Aparecido-Ferreira, Yen Fu Lin, Yong Xu, Minoru Osada, Takayoshi Sasaki, Kazuhito Tsukagoshi

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

A high-quality HCa2Nb3O10 (HCNO) nanoflake (εr = 9.1) consisting of high-κ perovskite nanosheets is adopted as a gate dielectric for graphene-based electronics. A dual-gated device was physically constructed by directly dry-transferring a 22-nm-thick HCNO nanoflake as a top gate dielectric onto graphene. The fabricated graphene field-effect transistor could be operated at biases <1.5 V with a gate leakage below 1 pA. The top-gate capacitance and mobility of the dual-gated graphene device at room temperature were estimated to be 367 nF/cm2 and 2500 cm2/V·s, respectively. These results show that HCNO can be employed as an alternative dielectric for graphene-based devices.

本文言語English
論文番号023113
ジャーナルApplied Physics Letters
103
2
DOI
出版ステータスPublished - 2013 7月 8
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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