Realization of ohmic-like contact between ferromagnet and rubrene single crystal

Yuta Kitamura; Eiji Shikoh; Kosuke Sawabe; Taishi Takenobu; Masashi Shiraishi

doi:10.1063/1.4745778

Realization of ohmic-like contact between ferromagnet and rubrene single crystal

Yuta Kitamura, Eiji Shikoh, Kosuke Sawabe, Taishi Takenobu, Masashi Shiraishi

研究成果: Article

3 引用（Scopus）

抜粋

We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F ₄TCNQ), molybdenum trioxide (MoO ₃), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F ₄TCNQ and MoO ₃ layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

元の言語	English
記事番号	073501
ジャーナル	Applied Physics Letters
巻	101
発行部数	7
DOI	https://doi.org/10.1063/1.4745778
出版物ステータス	Published - 2012 8 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4745778

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Kitamura, Y., Shikoh, E., Sawabe, K., Takenobu, T., & Shiraishi, M. (2012). Realization of ohmic-like contact between ferromagnet and rubrene single crystal. Applied Physics Letters, 101(7), [073501]. https://doi.org/10.1063/1.4745778

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abstract = "We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.",

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AU - Kitamura, Yuta

AU - Shikoh, Eiji

AU - Sawabe, Kosuke

AU - Takenobu, Taishi

AU - Shiraishi, Masashi

PY - 2012/8/13

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