Realization of ohmic-like contact between ferromagnet and rubrene single crystal

Yuta Kitamura, Eiji Shikoh, Kosuke Sawabe, Taishi Takenobu, Masashi Shiraishi

    研究成果: Article

    3 引用 (Scopus)

    抜粋

    We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

    元の言語English
    記事番号073501
    ジャーナルApplied Physics Letters
    101
    発行部数7
    DOI
    出版物ステータスPublished - 2012 8 13

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    フィンガープリント Realization of ohmic-like contact between ferromagnet and rubrene single crystal' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kitamura, Y., Shikoh, E., Sawabe, K., Takenobu, T., & Shiraishi, M. (2012). Realization of ohmic-like contact between ferromagnet and rubrene single crystal. Applied Physics Letters, 101(7), [073501]. https://doi.org/10.1063/1.4745778