Realization of ohmic-like contact between ferromagnet and rubrene single crystal

Yuta Kitamura; Eiji Shikoh; Kosuke Sawabe; Taishi Takenobu; Masashi Shiraishi

doi:10.1063/1.4745778

Realization of ohmic-like contact between ferromagnet and rubrene single crystal

Yuta Kitamura, Eiji Shikoh, Kosuke Sawabe, Taishi Takenobu, Masashi Shiraishi

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F ₄TCNQ), molybdenum trioxide (MoO ₃), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F ₄TCNQ and MoO ₃ layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

本文言語	English
論文番号	073501
ジャーナル	Applied Physics Letters
巻	101
号	7
DOI	https://doi.org/10.1063/1.4745778
出版ステータス	Published - 2012 8 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.4745778

他のファイルとリンク

フィンガープリント「Realization of ohmic-like contact between ferromagnet and rubrene single crystal」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{9baaeb8a804341caa0e5131daf34b591,

title = "Realization of ohmic-like contact between ferromagnet and rubrene single crystal",

abstract = "We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.",

author = "Yuta Kitamura and Eiji Shikoh and Kosuke Sawabe and Taishi Takenobu and Masashi Shiraishi",

year = "2012",

month = aug,

day = "13",

doi = "10.1063/1.4745778",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Realization of ohmic-like contact between ferromagnet and rubrene single crystal

AU - Kitamura, Yuta

AU - Shikoh, Eiji

AU - Sawabe, Kosuke

AU - Takenobu, Taishi

AU - Shiraishi, Masashi

PY - 2012/8/13

Y1 - 2012/8/13

N2 - We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

AB - We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

UR - http://www.scopus.com/inward/record.url?scp=84865412983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865412983&partnerID=8YFLogxK

U2 - 10.1063/1.4745778

DO - 10.1063/1.4745778

M3 - Article

AN - SCOPUS:84865412983

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 073501

ER -