Realization of ohmic-like contact between ferromagnet and rubrene single crystal

Yuta Kitamura, Eiji Shikoh, Kosuke Sawabe, Taishi Takenobu, Masashi Shiraishi

    研究成果: Article査読

    3 被引用数 (Scopus)

    抄録

    We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

    本文言語English
    論文番号073501
    ジャーナルApplied Physics Letters
    101
    7
    DOI
    出版ステータスPublished - 2012 8 13

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    フィンガープリント 「Realization of ohmic-like contact between ferromagnet and rubrene single crystal」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル