RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

Yuichi Matsushima, N. Seki, S. Akiba, Y. Noda, Y. Kushiro

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.

本文言語English
ページ(範囲)845-846
ページ数2
ジャーナルElectronics Letters
19
20
出版ステータスPublished - 1983 1 1
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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