Nitride heterojunction bipolar transistors (HBTs) are expected for high-power and high-temperature applications. However, there were two major issues that had to be addressed for these nitride HBTs. One was low current gains, and the other was large offset voltages. Recently, to solve these two issues, we have developed extrinsic base regrowth of p-InGaN and successfully fabricated Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs had low-resistive p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high-breakdown voltage characteristics as well as high-current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable to high-power electronic devices.
|出版ステータス||Published - 2004 12 1|
|イベント||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States|
継続期間: 2004 10 3 → 2004 10 8
|Conference||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia|
|Period||04/10/3 → 04/10/8|
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