Recombination dynamics of excitons in Mg0.11 Zn0.89 O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

Masashi Kubota, Takeyoshi Onuma, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Takayuki Sota, Shigefusa F. Chichibu*

*この研究の対応する著者

研究成果: Article査読

22 被引用数 (Scopus)

抄録

Recombination dynamics of excitons in Mg0.11 Zn0.89 O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMg O4 substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 μJ cm2 was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.

本文言語English
論文番号141903
ジャーナルApplied Physics Letters
90
14
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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