Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T. Onuma, S. F. Chichibu*, Y. Uchinuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki

*この研究の対応する著者

研究成果査読

64 被引用数 (Scopus)

抄録

Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

本文言語English
ページ(範囲)2449-2453
ページ数5
ジャーナルJournal of Applied Physics
94
4
DOI
出版ステータスPublished - 2003 8 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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