Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

研究成果: Article

38 被引用数 (Scopus)

抄録

The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.

元の言語English
ページ(範囲)1856-1862
ページ数7
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
発行部数4
出版物ステータスPublished - 2003 7 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

フィンガープリント 「Recombination dynamics of localized excitons in cubic In<sub>x</sub>Ga <sub>1-x</sub>N/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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