Spontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1997 1 1|
|イベント||Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA|
継続期間: 1996 12 2 → 1996 12 5
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