Recombination of localized excitons in InGaN single- and multiquantum-well structures

S. Chichibu*, T. Azuhata, T. Sota, S. Nakamura

*この研究の対応する著者

研究成果: Conference article査読

12 被引用数 (Scopus)

抄録

Spontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

本文言語English
ページ(範囲)653-658
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
449
出版ステータスPublished - 1997 1 1
外部発表はい
イベントProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
継続期間: 1996 12 21996 12 5

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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