Reconstruction at the Ga2 Se3/GaAs epitaxial interface

D. Li, Y. Nakamura, N. Otsuka, J. Qiu, M. Kobayashi, R. L. Gunshor

研究成果: Article査読

21 被引用数 (Scopus)

抄録

A highly developed two dimensional superstructure was found at the Ga2Se3/GaAs epitaxial interface by transmission electron microscope observations. The atomic arrangement of the superstructure was determined by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure is described as a c(2x2) ordered arrangement of vacancies on the interfacial Ga plane. A possible role of the mismatch of electronic configurations at the Ga2Se3/GaAs interface in the formation of the vacancy ordering is discussed.

本文言語English
ページ(範囲)2167-2170
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
9
4
DOI
出版ステータスPublished - 1991 7 1
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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