Reconstruction structure at Ga2Se3/GaAs epitaxial interface

D. Li, Y. Nakamura, N. Otsuka, J. Qiu, M. Kobayashi, R. L. Gunshor

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A highly developed reconstruction structure was found at the Ga2Se3/GaAs epitaxial interface by transmission electron microscope observations. The atomic structure of the reconstruction was derived by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure, which is described as an ordered arrangement of structural vacancies on the Ga sublattice, suggests that the reconstruction results from the valence mismatch at the Ga2Se3/GaAs interface.

本文言語English
ページ(範囲)1038-1042
ページ数5
ジャーナルJournal of Crystal Growth
111
1-4
DOI
出版ステータスPublished - 1991 5 2
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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