Red luminescence in pure silica glass

Ryoichi Tohmon, Yasushi Shimogaichi, Shuji Munekuni, Yoshimichi Ohki, Kaya Nagasawa, Yuryo Sakurai, Yoshimasa Hama

    研究成果: Conference contribution

    1 引用 (Scopus)

    抄録

    Photoluminescence measurements of the 1.9-eV (red) emission were carried out on high-purity silica glasses subjected to y-ray irradiation. The time decay of the 4.8-eV-excited-luminescence indicates that the 4.8-eV absorption and the 1.9-eV luminescence arise at two different defect sites, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations suggests that the defect responsible for the 1.9-eV luminescence is the non-bridging oxygen hole center (NBOHC: ≡Si-O). The 4.8-eV absorption band increases when the sample is heated in an oxygen atmosphere prior to y-irradiation, suggesting that the defect responsible is related to some form of excess oxygen. The defect is tentatively identified as a negatively charged non-bridging oxygen (≡Si-0) which is formed when a peroxy linkage traps a i-induced electron, (≡Si-0-0-Si≡ + e → ≡Si-0- + •O-Si≡). Both the NBOHC and the defect responsible for the 4.8-eV absorption must be present in the glass for the 4.8-eV band excited 1.9-eV luminescence to occur.

    元の言語English
    ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
    ページ198-204
    ページ数7
    1128
    DOI
    出版物ステータスPublished - 1989

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    Luminescence
    silica glass
    Fused silica
    Silica
    Defects
    luminescence
    Oxygen
    defects
    Absorption
    oxygen
    Irradiation
    Electron
    irradiation
    Photoluminescence
    Energy Transfer
    Trap
    linkages
    Linkage
    Energy transfer
    Atmosphere

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    これを引用

    Tohmon, R., Shimogaichi, Y., Munekuni, S., Ohki, Y., Nagasawa, K., Sakurai, Y., & Hama, Y. (1989). Red luminescence in pure silica glass. : Proceedings of SPIE - The International Society for Optical Engineering (巻 1128, pp. 198-204) https://doi.org/10.1117/12.961460

    Red luminescence in pure silica glass. / Tohmon, Ryoichi; Shimogaichi, Yasushi; Munekuni, Shuji; Ohki, Yoshimichi; Nagasawa, Kaya; Sakurai, Yuryo; Hama, Yoshimasa.

    Proceedings of SPIE - The International Society for Optical Engineering. 巻 1128 1989. p. 198-204.

    研究成果: Conference contribution

    Tohmon, R, Shimogaichi, Y, Munekuni, S, Ohki, Y, Nagasawa, K, Sakurai, Y & Hama, Y 1989, Red luminescence in pure silica glass. : Proceedings of SPIE - The International Society for Optical Engineering. 巻. 1128, pp. 198-204. https://doi.org/10.1117/12.961460
    Tohmon R, Shimogaichi Y, Munekuni S, Ohki Y, Nagasawa K, Sakurai Y その他. Red luminescence in pure silica glass. : Proceedings of SPIE - The International Society for Optical Engineering. 巻 1128. 1989. p. 198-204 https://doi.org/10.1117/12.961460
    Tohmon, Ryoichi ; Shimogaichi, Yasushi ; Munekuni, Shuji ; Ohki, Yoshimichi ; Nagasawa, Kaya ; Sakurai, Yuryo ; Hama, Yoshimasa. / Red luminescence in pure silica glass. Proceedings of SPIE - The International Society for Optical Engineering. 巻 1128 1989. pp. 198-204
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    AU - Munekuni, Shuji

    AU - Ohki, Yoshimichi

    AU - Nagasawa, Kaya

    AU - Sakurai, Yuryo

    AU - Hama, Yoshimasa

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    AB - Photoluminescence measurements of the 1.9-eV (red) emission were carried out on high-purity silica glasses subjected to y-ray irradiation. The time decay of the 4.8-eV-excited-luminescence indicates that the 4.8-eV absorption and the 1.9-eV luminescence arise at two different defect sites, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations suggests that the defect responsible for the 1.9-eV luminescence is the non-bridging oxygen hole center (NBOHC: ≡Si-O). The 4.8-eV absorption band increases when the sample is heated in an oxygen atmosphere prior to y-irradiation, suggesting that the defect responsible is related to some form of excess oxygen. The defect is tentatively identified as a negatively charged non-bridging oxygen (≡Si-0) which is formed when a peroxy linkage traps a i-induced electron, (≡Si-0-0-Si≡ + e → ≡Si-0- + •O-Si≡). Both the NBOHC and the defect responsible for the 4.8-eV absorption must be present in the glass for the 4.8-eV band excited 1.9-eV luminescence to occur.

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