Reduced carbon contamination in OMVPE grown GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimoto

研究成果: Article

48 被引用数 (Scopus)

抄録

Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.

本文言語English
ページ(範囲)L824-L826
ジャーナルJapanese journal of applied physics
24
10
DOI
出版ステータスPublished - 1985 10
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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