Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

S. F. Chichibu, T. Koida, M. D. Craven, B. A. Haskell, T. Onuma, T. Sota, J. S. Speck, S. P. DenBaars, S. Nakamura

研究成果: Article査読

抄録

Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τPL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τPL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

本文言語English
ページ(範囲)2700-2703
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
2
7
DOI
出版ステータスPublished - 2005 11 7

ASJC Scopus subject areas

  • Condensed Matter Physics

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