Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers

Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

We have developed photonic crystal (PhC) lasers, in which extremely short active regions (420 nm∼1260 nm) are embedded with an InP PhC slab. 4-μΛ threshold currents and 1-fJ/bit operating energies were achieved with 840-nm-long and 1260-nm-long active regions consisting of 3 and 2 QWs, respectively.

元の言語English
ホスト出版物のタイトル26th International Semiconductor Laser Conference, ISLC 2018
出版者Institute of Electrical and Electronics Engineers Inc.
ページ103-104
ページ数2
ISBN(電子版)9781538664865
DOI
出版物ステータスPublished - 2018 10 30
外部発表Yes
イベント26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
継続期間: 2018 9 162018 9 19

出版物シリーズ

名前Conference Digest - IEEE International Semiconductor Laser Conference
2018-September
ISSN(印刷物)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
United States
Santa Fe
期間18/9/1618/9/19

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

フィンガープリント Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Takeda, K., Fujii, T., Kuramochi, E., Shinya, A., Notomi, M., Kakitsuka, T., & Matsuo, S. (2018). Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. : 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 103-104). [8516187] (Conference Digest - IEEE International Semiconductor Laser Conference; 巻数 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516187