Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer

T. Yoshida, T. Nagatake, M. Kobayashi, A. Yoshikawa

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

本文言語English
ページ(範囲)750-753
ページ数4
ジャーナルJournal of Crystal Growth
159
1-4
DOI
出版ステータスPublished - 1996 2
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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