Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga₂Se₃ interfacial layer

The defect zincblende structure Ga₂Se₃ was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔE_v) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔE_v depended on the thickness of the Ga₂Se₃ interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga₂Se₃/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga₂Se₃ interfacial layer.