抄録
We examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS) to investigate the interfacial Si displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375°C. A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide exhibited considerably less Si displacement in the oxide layers near the interface than a thermally grown oxide, which indicates that an ozone oxide is homogenous. These results explain well our previous findings that an ozone oxide exhibits a constant HF etching rate of silicon dioxide while a thermally grown oxide slows the etching rate near the interface.
本文言語 | English |
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ページ(範囲) | 493-495 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 76 |
号 | 4 |
DOI | |
出版ステータス | Published - 2000 1月 24 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)