抄録
To investigate the interfacial Si-displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375 °C, we examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS). A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide film exhibited considerably less Si-displacement in the oxide layers near the interface than a thermally grown oxide film, which indicates that an ozone oxide film is homogenous. These results explain well our previous findings that an ozone oxide film exhibits a constant HF etching rate while a thermally grown oxide film slows the etching rate near the interface.
本文言語 | English |
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ページ(範囲) | 19-25 |
ページ数 | 7 |
ジャーナル | Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory |
巻 | 63 |
号 | 12 |
出版ステータス | Published - 1999 12月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学
- 電子工学および電気工学