Reduction of the interfacial Si displacement of ultrathin SiO2 film on Si(100) formed by highly-concentrated ozone

A. Kurokawa*, S. Ichimura, K. Nakamura

*この研究の対応する著者

研究成果: Article査読

抄録

To investigate the interfacial Si-displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375 °C, we examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS). A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide film exhibited considerably less Si-displacement in the oxide layers near the interface than a thermally grown oxide film, which indicates that an ozone oxide film is homogenous. These results explain well our previous findings that an ozone oxide film exhibits a constant HF etching rate while a thermally grown oxide film slows the etching rate near the interface.

本文言語English
ページ(範囲)19-25
ページ数7
ジャーナルDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
63
12
出版ステータスPublished - 1999 12 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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