Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers

T. Akasaka*, T. Nishida, Y. Taniyasu, M. Kasu, T. Makimoto, N. Kobayashi

*この研究の対応する著者

研究成果査読

24 被引用数 (Scopus)

抄録

Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

本文言語English
ページ(範囲)4140-4142
ページ数3
ジャーナルApplied Physics Letters
83
20
DOI
出版ステータスPublished - 2003 11 17
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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「Reduction of threading dislocations in crack-free AlGaN by using multiple thin Si<sub>x</sub>Al<sub>1-x</sub>N interlayers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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