抄録
Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.
本文言語 | English |
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ページ(範囲) | 4140-4142 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 83 |
号 | 20 |
DOI | |
出版ステータス | Published - 2003 11月 17 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)