Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers

T. Akasaka; T. Nishida; Y. Taniyasu; M. Kasu; T. Makimoto; N. Kobayashi

doi:10.1063/1.1628397

Reduction of threading dislocations in crack-free AlGaN by using multiple thin Si_xAl_1-xN interlayers

T. Akasaka^*, T. Nishida, Y. Taniyasu, M. Kasu, T. Makimoto, N. Kobayashi

^*この研究の対応する著者

研究成果: Article › 査読

28 被引用数 (Scopus)

抄録

Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple Si_xAl_1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

本文言語	English
ページ（範囲）	4140-4142
ページ数	3
ジャーナル	Applied Physics Letters
巻	83
号	20
DOI	https://doi.org/10.1063/1.1628397
出版ステータス	Published - 2003 11月 17
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.1628397

他のファイルとリンク

引用スタイル

@article{09784b8ba1144859b612e2c3a7f23c85,

title = "Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers",

abstract = "Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.",

author = "T. Akasaka and T. Nishida and Y. Taniyasu and M. Kasu and T. Makimoto and N. Kobayashi",

year = "2003",

month = nov,

day = "17",

doi = "10.1063/1.1628397",

language = "English",

volume = "83",

pages = "4140--4142",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers

AU - Akasaka, T.

AU - Nishida, T.

AU - Taniyasu, Y.

AU - Kasu, M.

AU - Makimoto, T.

AU - Kobayashi, N.

PY - 2003/11/17

Y1 - 2003/11/17

N2 - Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

AB - Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

UR - http://www.scopus.com/inward/record.url?scp=0348041884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348041884&partnerID=8YFLogxK

U2 - 10.1063/1.1628397

DO - 10.1063/1.1628397

M3 - Article

AN - SCOPUS:0348041884

VL - 83

SP - 4140

EP - 4142

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -