Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers

T. Akasaka; T. Nishida; Y. Taniyasu; M. Kasu; T. Makimoto; N. Kobayashi

doi:10.1063/1.1628397

Reduction of threading dislocations in crack-free AlGaN by using multiple thin Si_xAl_1-xN interlayers

T. Akasaka^*, T. Nishida, Y. Taniyasu, M. Kasu, T. Makimoto, N. Kobayashi

^*この研究の対応する著者

研究成果 › 査読

24 被引用数 (Scopus)

抄録

Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple Si_xAl_1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

本文言語	English
ページ（範囲）	4140-4142
ページ数	3
ジャーナル	Applied Physics Letters
巻	83
号	20
DOI	https://doi.org/10.1063/1.1628397
出版ステータス	Published - 2003 11 17
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1628397

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AU - Akasaka, T.

AU - Nishida, T.

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AU - Kasu, M.

AU - Makimoto, T.

AU - Kobayashi, N.

PY - 2003/11/17

Y1 - 2003/11/17

N2 - Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

AB - Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

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