Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth

S. Isawa, Y. Akashi, A. Matsumoto, K. Akahane, Y. Matsushima, H. Ishikawa, K. Utaka

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We investigated the regional control of the band-gap originated from the highly-stacked quantum dots (QD) on the InP (311)B substrate changing ion implantation depths using quantum dot intermixing (QDI) technique the QDI process involved B+ implantation and rapid thermal annealing (RTA) at 600 °C, in which the ion implantation depths were controlled regionally with a combination of SiO2 and resist (AZ) films. Controlled blue shift of the photoluminescence (PL) spectra verified the effectiveness of the controlled QDI process for the application to semiconductor photonic integrated circuits using 1550nm-band QDs.

本文言語English
ホスト出版物のタイトル2019 Compound Semiconductor Week, CSW 2019 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728100807
DOI
出版ステータスPublished - 2019 5
イベント2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
継続期間: 2019 5 192019 5 23

出版物シリーズ

名前2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
国/地域Japan
CityNara
Period19/5/1919/5/23

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学
  • 原子分子物理学および光学

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