Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth

S. Isawa, Y. Akashi, A. Matsumoto, K. Akahane, Y. Matsushima, H. Ishikawa, K. Utaka

研究成果: Conference contribution

抜粋

We investigated the regional control of the band-gap originated from the highly-stacked quantum dots (QD) on the InP (311)B substrate changing ion implantation depths using quantum dot intermixing (QDI) technique the QDI process involved B+ implantation and rapid thermal annealing (RTA) at 600 °C, in which the ion implantation depths were controlled regionally with a combination of SiO2 and resist (AZ) films. Controlled blue shift of the photoluminescence (PL) spectra verified the effectiveness of the controlled QDI process for the application to semiconductor photonic integrated circuits using 1550nm-band QDs.

元の言語English
ホスト出版物のタイトル2019 Compound Semiconductor Week, CSW 2019 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728100807
DOI
出版物ステータスPublished - 2019 5
イベント2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
継続期間: 2019 5 192019 5 23

出版物シリーズ

名前2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
Japan
Nara
期間19/5/1919/5/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

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  • これを引用

    Isawa, S., Akashi, Y., Matsumoto, A., Akahane, K., Matsushima, Y., Ishikawa, H., & Utaka, K. (2019). Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. : 2019 Compound Semiconductor Week, CSW 2019 - Proceedings [8819190] (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819190