Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth

Shohei Isawa, Yota Akashi, Ryosuke Morita, Runa Kaneko, Hirokazu Okada, Atsushi Matsumoto, Koichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

研究成果: Article査読

抄録

The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.

本文言語English
論文番号1900521
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
217
3
DOI
出版ステータスPublished - 2020 2 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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