Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass

Ryoichi Tohmon*, Yasushi Shimogaichi, Shuji Munekuni, Yoshimichi Ohki, Yoshimasa Hama, Kaya Nagasawa

*この研究の対応する著者

研究成果: Article査読

75 被引用数 (Scopus)

抄録

Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.

本文言語English
ページ(範囲)1650-1652
ページ数3
ジャーナルApplied Physics Letters
54
17
DOI
出版ステータスPublished - 1989

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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