Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs

K. Kuriyama*, T. Koyama, K. Kushida, N. Hayashi, Naoto Kobayashi, M. Hasegawa

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Nuclear reaction analysis (NRA), using the 12C(d,p) 13C reaction, in conjunction with Rutherford backscattering spectrometry (RBS) in the channeling geometry was used to evaluate the substitutional fraction of C in (100)-oriented semi-insulating GaAs implanted with 12C ions to a dose of 5 × 1016 cm-2. The substitutional fraction of the implanted 12C evaluated by NRA was 19% in the samples annealed at 600°C, whereas the electrical activation rate of the same sample was 2.1%, as measured by the van der Pauw method. It is suggested that a possible origin of this discrepancy is the compensating centers such as As vacancy (VAs) and/or VAs-CAs complex introduced in the annealing processes. This was supported by both the surface precipitation of As observed by Raman scattering and the enhancement of the surface peak in RBS-channeling yield which was measured by using a 1.5 MeV 4He+-ion beam.

本文言語English
ページ(範囲)6926-6928
ページ数3
ジャーナルJournal of Applied Physics
85
9
出版ステータスPublished - 1999 5月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 物理学および天文学(その他)

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