Nuclear reaction analysis (NRA), using the 12C(d,p) 13C reaction, in conjunction with Rutherford backscattering spectrometry (RBS) in the channeling geometry was used to evaluate the substitutional fraction of C in (100)-oriented semi-insulating GaAs implanted with 12C ions to a dose of 5 × 1016 cm-2. The substitutional fraction of the implanted 12C evaluated by NRA was 19% in the samples annealed at 600°C, whereas the electrical activation rate of the same sample was 2.1%, as measured by the van der Pauw method. It is suggested that a possible origin of this discrepancy is the compensating centers such as As vacancy (VAs) and/or VAs-CAs complex introduced in the annealing processes. This was supported by both the surface precipitation of As observed by Raman scattering and the enhancement of the surface peak in RBS-channeling yield which was measured by using a 1.5 MeV 4He+-ion beam.
|ジャーナル||Journal of Applied Physics|
|出版ステータス||Published - 1999 5月 1|
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