Reliability simulation of AC hot carrier degradation for deep sub-micron MOSFETs

Satoshi Shimizu, Motoaki Tanizawa, Shigeru Kusunoki, Masahide Inuishi, Hirokazu Miyoshi

研究成果: Article

抄録

High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of MOSFETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.

元の言語English
ページ(範囲)19-26
ページ数8
ジャーナルElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
79
発行部数11
出版物ステータスPublished - 1996 11
外部発表Yes

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Hot carriers
alternating current
field effect transistors
degradation
Degradation
direct current
simulation
Networks (circuits)
life (durability)
Carrier lifetime
packing density
Electric potential
electric potential
carrier lifetime
scaling
requirements
estimates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

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title = "Reliability simulation of AC hot carrier degradation for deep sub-micron MOSFETs",
abstract = "High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of MOSFETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.",
keywords = "AC lifetime, AC stress, Circuit simulation, Duty factor, Hot carrier degradation",
author = "Satoshi Shimizu and Motoaki Tanizawa and Shigeru Kusunoki and Masahide Inuishi and Hirokazu Miyoshi",
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T1 - Reliability simulation of AC hot carrier degradation for deep sub-micron MOSFETs

AU - Shimizu, Satoshi

AU - Tanizawa, Motoaki

AU - Kusunoki, Shigeru

AU - Inuishi, Masahide

AU - Miyoshi, Hirokazu

PY - 1996/11

Y1 - 1996/11

N2 - High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of MOSFETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.

AB - High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of MOSFETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.

KW - AC lifetime

KW - AC stress

KW - Circuit simulation

KW - Duty factor

KW - Hot carrier degradation

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