抄録
High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of MOSFETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 19-26 |
| ページ数 | 8 |
| ジャーナル | Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) |
| 巻 | 79 |
| 発行部数 | 11 |
| 出版物ステータス | Published - 1996 11 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
Reliability simulation of AC hot carrier degradation for deep sub-micron MOSFETs. / Shimizu, Satoshi; Tanizawa, Motoaki; Kusunoki, Shigeru; Inuishi, Masahide; Miyoshi, Hirokazu.
：: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 巻 79, 番号 11, 11.1996, p. 19-26.研究成果: Article
}
TY - JOUR
T1 - Reliability simulation of AC hot carrier degradation for deep sub-micron MOSFETs
AU - Shimizu, Satoshi
AU - Tanizawa, Motoaki
AU - Kusunoki, Shigeru
AU - Inuishi, Masahide
AU - Miyoshi, Hirokazu
PY - 1996/11
Y1 - 1996/11
N2 - High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of MOSFETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.
AB - High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of MOSFETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.
KW - AC lifetime
KW - AC stress
KW - Circuit simulation
KW - Duty factor
KW - Hot carrier degradation
UR - http://www.scopus.com/inward/record.url?scp=0030282466&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030282466&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0030282466
VL - 79
SP - 19
EP - 26
JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
SN - 8756-663X
IS - 11
ER -