Reliable single atom doping and discrete dopant effects on transistor performance

Takahiro Shinada; Masahiro Hori; Yukinori Ono; Keigo Taira; Akira Komatsubara; Takashi Tanii; Tetsuo Endoh; Iwao Ohdomari

doi:10.1109/IEDM.2010.5703428

Reliable single atom doping and discrete dopant effects on transistor performance

Takahiro Shinada^*, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

本文言語	English
ホスト出版物のタイトル	2010 IEEE International Electron Devices Meeting, IEDM 2010
ページ	26.5.1-26.5.4
DOI	https://doi.org/10.1109/IEDM.2010.5703428
出版ステータス	Published - 2010 12月 1
イベント	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States 継続期間: 2010 12月 6 → 2010 12月 8

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
国/地域	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2010.5703428

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引用スタイル

Shinada, T., Hori, M., Ono, Y., Taira, K., Komatsubara, A., Tanii, T., Endoh, T., & Ohdomari, I. (2010). Reliable single atom doping and discrete dopant effects on transistor performance. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 26.5.1-26.5.4). [5703428] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703428

Shinada, T, Hori, M, Ono, Y, Taira, K, Komatsubara, A, Tanii, T, Endoh, T & Ohdomari, I 2010, Reliable single atom doping and discrete dopant effects on transistor performance. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703428, Technical Digest - International Electron Devices Meeting, IEDM, pp. 26.5.1-26.5.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703428

@inproceedings{96a4d0b5463d40259139ab13ec768cfa,

title = "Reliable single atom doping and discrete dopant effects on transistor performance",

abstract = "For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.",

author = "Takahiro Shinada and Masahiro Hori and Yukinori Ono and Keigo Taira and Akira Komatsubara and Takashi Tanii and Tetsuo Endoh and Iwao Ohdomari",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/IEDM.2010.5703428",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "26.5.1--26.5.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

TY - GEN

T1 - Reliable single atom doping and discrete dopant effects on transistor performance

AU - Shinada, Takahiro

AU - Hori, Masahiro

AU - Ono, Yukinori

AU - Taira, Keigo

AU - Komatsubara, Akira

AU - Tanii, Takashi

AU - Endoh, Tetsuo

AU - Ohdomari, Iwao

PY - 2010/12/1

Y1 - 2010/12/1

N2 - For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

AB - For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

UR - http://www.scopus.com/inward/record.url?scp=79951817087&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951817087&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703428

DO - 10.1109/IEDM.2010.5703428

M3 - Conference contribution

AN - SCOPUS:79951817087

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 26.5.1-26.5.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Reliable single atom doping and discrete dopant effects on transistor performance

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出版物シリーズ

Conference

ASJC Scopus subject areas

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