Removal conditions of films deposited on probe surface

Isamu Kato*, Tsuyoshi Shimoda, Toshihiro Yamagishi

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.

本文言語English
ページ(範囲)3586-3589
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
33
6 A
出版ステータスPublished - 1994 6

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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