Resistance switching in anodic oxidized amorphous TiO2 films

Changhao Liang, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

研究成果: Article

11 引用 (Scopus)

抄録

A thin amorphous TiO2 layer was prepared using anodic oxidation of Ti. Resistance switching of amorphous TiO2 was investigated by sweeping in a continuous voltage scan and pulse bias voltage. The bipolar switching was observed without the need of a forming process. Switching of the Ti/amorphous-TiO2/Pt based structure showed good endurance. The switching mechanism and current-voltage characteristics were investigated from combinatorial analysis of the conducting filaments' evolution and the space-charge limited current conduction. The oxygen-vacancies migration involved redox processes, which is responsible for the recovery and rupture of sub-TiOx based conducting filaments Inside the amorphous TiO 2 layer.

元の言語English
ページ(範囲)640021-640023
ページ数3
ジャーナルApplied Physics Express
1
発行部数6
DOI
出版物ステータスPublished - 2008 6
外部発表Yes

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Amorphous films
conduction
filaments
combinatorial analysis
electric potential
endurance
Anodic oxidation
Oxygen vacancies
Current voltage characteristics
Bias voltage
Electric space charge
space charge
Durability
recovery
Recovery
oxidation
Electric potential
oxygen
pulses

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Resistance switching in anodic oxidized amorphous TiO2 films. / Liang, Changhao; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu.

:: Applied Physics Express, 巻 1, 番号 6, 06.2008, p. 640021-640023.

研究成果: Article

Liang, Changhao ; Terabe, Kazuya ; Hasegawa, Tsuyoshi ; Aono, Masakazu. / Resistance switching in anodic oxidized amorphous TiO2 films. :: Applied Physics Express. 2008 ; 巻 1, 番号 6. pp. 640021-640023.
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