Resistance switching in anodic oxidized amorphous TiO2 films

Changhao Liang, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

研究成果: Article

11 引用 (Scopus)

抜粋

A thin amorphous TiO2 layer was prepared using anodic oxidation of Ti. Resistance switching of amorphous TiO2 was investigated by sweeping in a continuous voltage scan and pulse bias voltage. The bipolar switching was observed without the need of a forming process. Switching of the Ti/amorphous-TiO2/Pt based structure showed good endurance. The switching mechanism and current-voltage characteristics were investigated from combinatorial analysis of the conducting filaments' evolution and the space-charge limited current conduction. The oxygen-vacancies migration involved redox processes, which is responsible for the recovery and rupture of sub-TiOx based conducting filaments Inside the amorphous TiO 2 layer.

元の言語English
ページ(範囲)640021-640023
ページ数3
ジャーナルApplied Physics Express
1
発行部数6
DOI
出版物ステータスPublished - 2008 6 1
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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