Resistance switching of an individual Ag2S/Ag nanowire heterostructure

Changhao Liang, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

研究成果: Article査読

80 被引用数 (Scopus)

抄録

Ag/Cu-based chalcogenide ionic conductors are candidates for use in applications in resistance-switching and nonvolatile memory devices. We report the investigation of the electrical properties of individual Ag2S/Ag heteronanowires (HNWs) by atomic force microscopy (AFM) using a nanoscale-tip electrode. Hysteretic current-voltage (IV) curves and the polarity-dependent resistance-switching phenomenon in an individual Ag2S/Ag HNW were observed. A local impedance spectroscopy measurement of Ag2S/Ag HNWs was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the electrode/mixed conductor. It is proposed that reversible resistance switching originates from the creation and rupture of filament-like conducting pathways inside the Ag2S/Ag HNW.

本文言語English
論文番号485202
ジャーナルNanotechnology
18
48
DOI
出版ステータスPublished - 2007 12月 5
外部発表はい

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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