Response calculation of a stacked CdZnTe detector for 16N γ-ray measurement

H. Nishizawa*, H. Inujima, T. Usami, H. Fujiwara, H. Nakamura

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

A stacked CdZnTe semiconductor detector, which is able to detect the 6.13 MeV γ-rays from 16N, was prototyped and the response calculation was carried out by a Monte-Carlo simulation. The detector response was simulated by using the electron and photon transport code, EGS4 and taking into account the carrier trapping phenomena. The results of the response calculation agreed with the experimental data from the checking source of 137Cs and 60Co. The prototype's response and sensitivity to 16N were calculated by simulating an incident energy of 6.13 MeV. The source spectra were unfolded with the detector's response function obtained by simulation, and it indicated that the incident γ-ray energy and its intensity ratio was identified. We have acquired the potential to measure the γ-ray energy in the high energy region about 6 MeV with the stacked CdZnTe detector.

本文言語English
ページ(範囲)268-274
ページ数7
ジャーナルNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
463
1-2
DOI
出版ステータスPublished - 2001 5 1
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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