Reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for the test of total dose effects in n-ch metal-oxide-semiconductor field-effect transistor (MOSFET)

Meishoku Koh, Ken Ichi Hara, Katsuyuki Horita, Bungo Shigeta, Takashi Matsukawa, Atsushi Kishida, Takashi Tanii, Makoto Goto, Iwao Ohdomari

研究成果: Article査読

7 被引用数 (Scopus)

抄録

To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion microprobe. With only five He single ions per pixel, we have succeeded in obtaining images of n-ch MOSFET and n-type Si regions fabricated on a p-well without any degradation of device characteristics. The R- mode SIBIC imaging has made it possible to count exactly the number of ions incident upon the MOSFET during radiation hardness tests.

本文言語English
ページ(範囲)L962-L965
ジャーナルJapanese journal of applied physics
33
7
DOI
出版ステータスPublished - 1994 7

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for the test of total dose effects in n-ch metal-oxide-semiconductor field-effect transistor (MOSFET)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル